Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 57
... technology is proposed . Because fluorine atoms can easily be incorporated with the technology , TD - LPD fluorine - doped SiO2 ( FSG ) exhibits low - K ( ~ 3.4 ) and low - stress ( ~ 40MPa ) property . 3 Generally , low - K FSG is easy ...
... technology is proposed . Because fluorine atoms can easily be incorporated with the technology , TD - LPD fluorine - doped SiO2 ( FSG ) exhibits low - K ( ~ 3.4 ) and low - stress ( ~ 40MPa ) property . 3 Generally , low - K FSG is easy ...
Page 105
... technology node is now decreasing from the historic 3 year per technology node predicted by Moore's law . One approach is to use increasing numbers of metallization layers but this solution has significant costs and is reaching ...
... technology node is now decreasing from the historic 3 year per technology node predicted by Moore's law . One approach is to use increasing numbers of metallization layers but this solution has significant costs and is reaching ...
Page 291
... technology consists of multilevel metallization and multilevel interlayer technologies . Multilevel metallization technology requires multilevel via connects and multilevel lines surrounding the interlayer dielectric , which is ...
... technology consists of multilevel metallization and multilevel interlayer technologies . Multilevel metallization technology requires multilevel via connects and multilevel lines surrounding the interlayer dielectric , which is ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films