Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 17
... Teflon AF ( Du Pont , Teflon AF 1600 ) at deposition rates of the order of 0.02 ML / min and times of about 10 min 18 . In order to clarify the nucleation process for noble metals on polymers we measured the sticking coefficient of Ag ...
... Teflon AF ( Du Pont , Teflon AF 1600 ) at deposition rates of the order of 0.02 ML / min and times of about 10 min 18 . In order to clarify the nucleation process for noble metals on polymers we measured the sticking coefficient of Ag ...
Page 125
... AF and Teflon - AF will be discussed . Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented . INTRODUCTION In recent days the microelectronics industry has put considerable ...
... AF and Teflon - AF will be discussed . Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented . INTRODUCTION In recent days the microelectronics industry has put considerable ...
Page 278
... teflon AF film to about 3.35 for a polyimide siloxane [ 13 ] . Polymers are comparatively softer materials with lower Young's modules , tensile stress , toughness , and higher thermal coefficient of expansion ( TCE ) . Table 1 lists a ...
... teflon AF film to about 3.35 for a polyimide siloxane [ 13 ] . Polymers are comparatively softer materials with lower Young's modules , tensile stress , toughness , and higher thermal coefficient of expansion ( TCE ) . Table 1 lists a ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films