Materials Research Society Symposia Proceedings, Volume 511 |
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Page 293
Therefore, low outgas characteristics of ILD will make it a candidate for
fluorinated carbon ILD. ... Figure 2 shows the TEM view of the metal layer on a-C:
F after annealing at 400°C. A flat interface between Cu and a-C:F was observed.
Figure 3 ...
Therefore, low outgas characteristics of ILD will make it a candidate for
fluorinated carbon ILD. ... Figure 2 shows the TEM view of the metal layer on a-C:
F after annealing at 400°C. A flat interface between Cu and a-C:F was observed.
Figure 3 ...
Page 296
The measured leakage current between the a-C:F ILD and the reference Si02
ILD is compared as a function of bias voltage. Although the leakage current of the
a-C:F ILD is one order higher than that of the Si02 ILD, electrical isolation is ...
The measured leakage current between the a-C:F ILD and the reference Si02
ILD is compared as a function of bias voltage. Although the leakage current of the
a-C:F ILD is one order higher than that of the Si02 ILD, electrical isolation is ...
Page 342
This joule heating effect is, therefore, a reliability issue for low-k ILD.
EXPERIMENT We examined the influence of joule heating on the wiring lifetime
for a-C:F ILD under highly accelerated stress conditions at the substrate
temperature of 300 ...
This joule heating effect is, therefore, a reliability issue for low-k ILD.
EXPERIMENT We examined the influence of joule heating on the wiring lifetime
for a-C:F ILD under highly accelerated stress conditions at the substrate
temperature of 300 ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
42 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel
Bibliographic information
| Title | Materials Research Society Symposia Proceedings, Volume 511 Materials Research Society Symposia Proceedings, Materials Research Society Symposia Proceedings |
| Author | Chien Chiang |
| Contributor | Materials Research Society |
| Publisher | North Holland, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |