Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 60
... absorption of water induces a very slight compressive stress , implying that the physical absorption / desorption is not the dominant factor in affecting σ . Though the increase in σ after 1st annealing can be well explained by the ...
... absorption of water induces a very slight compressive stress , implying that the physical absorption / desorption is not the dominant factor in affecting σ . Though the increase in σ after 1st annealing can be well explained by the ...
Page 119
... absorption coefficient is a = 4лkn , and t is the sample thickness . For normal incidence , R is ( Een 12-1 ) ... absorption is a GCA = 70 cm1 . The 16 % reduction of the absorption is attributed to the decreased volume fraction ( 24 ...
... absorption coefficient is a = 4лkn , and t is the sample thickness . For normal incidence , R is ( Een 12-1 ) ... absorption is a GCA = 70 cm1 . The 16 % reduction of the absorption is attributed to the decreased volume fraction ( 24 ...
Page 120
... absorption spectrum exhibits a rapid increase with increasing frequency as shown in Fig . 2 . -1 The GCA is made of soda lime glass . In the far - infrared glasses show infrared absorption which varies as the square of the frequency and ...
... absorption spectrum exhibits a rapid increase with increasing frequency as shown in Fig . 2 . -1 The GCA is made of soda lime glass . In the far - infrared glasses show infrared absorption which varies as the square of the frequency and ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films