Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 133
ADHESION ENERGY MEASUREMENTS OF MULTILAYER LOW - K DIELECTRIC MATERIALS FOR ULSI APPLICATIONS > ** E. O. SHAFFER II * , M. E. MILLS * , D. HAWN * , M. VAN GESTEL ** , A. KNORR ** , H. GUNDLACH ** , K. KUMAR ** , A. E. KALOYEROS ** AND ...
ADHESION ENERGY MEASUREMENTS OF MULTILAYER LOW - K DIELECTRIC MATERIALS FOR ULSI APPLICATIONS > ** E. O. SHAFFER II * , M. E. MILLS * , D. HAWN * , M. VAN GESTEL ** , A. KNORR ** , H. GUNDLACH ** , K. KUMAR ** , A. E. KALOYEROS ** AND ...
Page 136
The backing layer material must have a known stress - temperature profile , higher fracture toughness than the test structures and have excellent adhesion to the test structure . The wafer is diced so that 90 ° edges to the substrate ...
The backing layer material must have a known stress - temperature profile , higher fracture toughness than the test structures and have excellent adhesion to the test structure . The wafer is diced so that 90 ° edges to the substrate ...
Page 137
Table 1 : Measured Adhesion Energies of CVD Al Adhesion Energy ( G , J / m2 ) 18.4 £ 5.9 - Substrate Plasma Treat RIE - BCB H2 BCB H2 RIE - BCB Ar BCB Ar RIE - BCB none BCB none Locus of Failure BCB / Al not testable BCBIAl Si / BCB ...
Table 1 : Measured Adhesion Energies of CVD Al Adhesion Energy ( G , J / m2 ) 18.4 £ 5.9 - Substrate Plasma Treat RIE - BCB H2 BCB H2 RIE - BCB Ar BCB Ar RIE - BCB none BCB none Locus of Failure BCB / Al not testable BCBIAl Si / BCB ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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addition adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel