Materials Research Society Symposia Proceedings, Volume 511 |
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Page 133
Hence, many good dielectric materials may be prematurely eliminated from
further research not because of inherently poor adhesion but because of the
necessity to optimize processing strategies. In this paper, we use the modified
Edge Liftoff ...
Hence, many good dielectric materials may be prematurely eliminated from
further research not because of inherently poor adhesion but because of the
necessity to optimize processing strategies. In this paper, we use the modified
Edge Liftoff ...
Page 136
For Al CVD the source precursor (dimethylelthylamine alane (DMEAA) at 20
scem) and H2 carrier (at 500 scem) were introduced into the cluster tool chamber
at a pressure of 500 mTorr with a substrate temperature of 125 °C. Adhesion ...
For Al CVD the source precursor (dimethylelthylamine alane (DMEAA) at 20
scem) and H2 carrier (at 500 scem) were introduced into the cluster tool chamber
at a pressure of 500 mTorr with a substrate temperature of 125 °C. Adhesion ...
Page 137
Table 1 : Measured Adhesion Energies of CVD Al Table 2: Measured Adhesion
Energies of PVD Liner Layers Research is still continuing on this project. Builds
of the substrate, liner and CVD Al metal have been made and are currently being
...
Table 1 : Measured Adhesion Energies of CVD Al Table 2: Measured Adhesion
Energies of PVD Liner Layers Research is still continuing on this project. Builds
of the substrate, liner and CVD Al metal have been made and are currently being
...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel