Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 99
... aerogels . Diffusion of copper is orders of magnitude faster in these xerogels than in the corresponding thermal oxide . An activation energy of 0.9 eV was estimated based on a convective diffusion model . INTRODUCTION Silica xerogels ...
... aerogels . Diffusion of copper is orders of magnitude faster in these xerogels than in the corresponding thermal oxide . An activation energy of 0.9 eV was estimated based on a convective diffusion model . INTRODUCTION Silica xerogels ...
Page 103
... aerogels that have been dried at high temperature . Diffusion of copper is orders of magnitude faster in these xerogels than in the corresponding thermal oxide . An activation energy of 0.9 ev was estimated based on a convective ...
... aerogels that have been dried at high temperature . Diffusion of copper is orders of magnitude faster in these xerogels than in the corresponding thermal oxide . An activation energy of 0.9 ev was estimated based on a convective ...
Page 265
... Aerogel are ultraporous spin - on- glasses which can have densities as low as 0.1 g / cm3 . The low density results in a very low dielectric constant ( K < 1.8 ) . The etching of Aerogel and Xerogel will be addressed in future work ...
... Aerogel are ultraporous spin - on- glasses which can have densities as low as 0.1 g / cm3 . The low density results in a very low dielectric constant ( K < 1.8 ) . The etching of Aerogel and Xerogel will be addressed in future work ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films