Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 114
... Aluminum Traces Using 20:80 Porous Silica Thin Film Figure 11 - Gap Fill of Aluminum Traces Using 30:70 Porous Silica Thin Film Electrical Characterization The dielectric properties of the thin films were determined using a parallel ...
... Aluminum Traces Using 20:80 Porous Silica Thin Film Figure 11 - Gap Fill of Aluminum Traces Using 30:70 Porous Silica Thin Film Electrical Characterization The dielectric properties of the thin films were determined using a parallel ...
Page 136
... aluminum was deposited in a modified LAM QUAD cluster tool ( hot wall ) . For Al CVD the source precursor ( dimethylelthylamine alane ( DMEAA ) at 20 sccm ) and H2 carrier ( at 500 sccm ) were introduced into the cluster tool chamber at ...
... aluminum was deposited in a modified LAM QUAD cluster tool ( hot wall ) . For Al CVD the source precursor ( dimethylelthylamine alane ( DMEAA ) at 20 sccm ) and H2 carrier ( at 500 sccm ) were introduced into the cluster tool chamber at ...
Page 191
... aluminum and piles up at the free surface . The effect of various plasma treatments was investigated to passivate the surface of fluorinated silicon oxide . CF4- O2 plasma treatment of the fluorinated oxide before aluminum deposition ...
... aluminum and piles up at the free surface . The effect of various plasma treatments was investigated to passivate the surface of fluorinated silicon oxide . CF4- O2 plasma treatment of the fluorinated oxide before aluminum deposition ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films