Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 74
Page 58
... Deposition begins after the Si wafers are immersed into the supersaturated solution . Because temperature difference drives the saturated solution into supersaturation , the technique is thus named as temperature - difference liquid ...
... Deposition begins after the Si wafers are immersed into the supersaturated solution . Because temperature difference drives the saturated solution into supersaturation , the technique is thus named as temperature - difference liquid ...
Page 60
... deposited at room temperature , the as - deposited total stress contains no thermal stress . So , the total stress is just equal to the intrinsic stress for the as - deposited . Without thermal effect involved , change in σ¡ , can be ...
... deposited at room temperature , the as - deposited total stress contains no thermal stress . So , the total stress is just equal to the intrinsic stress for the as - deposited . Without thermal effect involved , change in σ¡ , can be ...
Page 143
... as - deposited condition and PPXN as - deposited , after a 200 ° C anneal , and after a 325 ° C anneal . Above a critical thickness of ~ 112nm PPXN's as - deposited birefringence changed only slightly as a function of thickness at least ...
... as - deposited condition and PPXN as - deposited , after a 200 ° C anneal , and after a 325 ° C anneal . Above a critical thickness of ~ 112nm PPXN's as - deposited birefringence changed only slightly as a function of thickness at least ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films