Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 16
... ATOMS AND GROWTH OF METAL FILMS If metal atoms impinge on metal surfaces their sticking coefficient is generally very close to unity . The sticking coefficient S is defined as the ratio of the number of adsorbed metal atoms to the total ...
... ATOMS AND GROWTH OF METAL FILMS If metal atoms impinge on metal surfaces their sticking coefficient is generally very close to unity . The sticking coefficient S is defined as the ratio of the number of adsorbed metal atoms to the total ...
Page 128
... ( Atoms per CC X 1.0E22 ) 0.8 0.05 10.7 045 0.6 0.3 -0.1 Fluorine Atoms / Total Atoms Concentration ( Atoms per CCX 1 0E22 0 04 035 0.03 0.025 0.02 0.015 0.01 0.005 0 0 0 0.0 0.2 0.4 0.6 0.8 1.0 Depth in Microns Absolute Conc F / Total Atoms ...
... ( Atoms per CC X 1.0E22 ) 0.8 0.05 10.7 045 0.6 0.3 -0.1 Fluorine Atoms / Total Atoms Concentration ( Atoms per CCX 1 0E22 0 04 035 0.03 0.025 0.02 0.015 0.01 0.005 0 0 0 0.0 0.2 0.4 0.6 0.8 1.0 Depth in Microns Absolute Conc F / Total Atoms ...
Page 130
... Atoms / Total Atoms Figure 7. Hydrogen depth profile of polynapthalene film Figure 8 shows the hydrogen depth profile in a 5000 A thick porous silicon dioxide film . These films are passivated with -CH3 groups . This process makes the ...
... Atoms / Total Atoms Figure 7. Hydrogen depth profile of polynapthalene film Figure 8 shows the hydrogen depth profile in a 5000 A thick porous silicon dioxide film . These films are passivated with -CH3 groups . This process makes the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films