Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 139
OPTICAL BIREFRINGENCE TO DETERMINE MORPHOLOGICAL CHANGES IN LOW - K THIN FILM CVD POLYMERS JAY J. SENKEVICH , VIKTOR SIMKOVIC , SESHU B. DESU Virginia Tech , Dept. of Materials Science and Engineering , 213 Holden Hall , Blacksburg , VA ...
OPTICAL BIREFRINGENCE TO DETERMINE MORPHOLOGICAL CHANGES IN LOW - K THIN FILM CVD POLYMERS JAY J. SENKEVICH , VIKTOR SIMKOVIC , SESHU B. DESU Virginia Tech , Dept. of Materials Science and Engineering , 213 Holden Hall , Blacksburg , VA ...
Page 140
... birefringence of PPXN , VT - 4 , PPXC , and PPXD as a function of 30 minute post - deposition anneals in nitrogen . PPXC and PPXD became more positively birefringent up until their crystalline melting points at ~ 290oC and ~ 380 ° C.6 ...
... birefringence of PPXN , VT - 4 , PPXC , and PPXD as a function of 30 minute post - deposition anneals in nitrogen . PPXC and PPXD became more positively birefringent up until their crystalline melting points at ~ 290oC and ~ 380 ° C.6 ...
Page 143
Birefringence such as polymer crystallization and ferroelectricity will show ultrathin film effects . The study here investigated the birefringence as a function of thickness for PPXC in the as - deposited condition and PPXN as ...
Birefringence such as polymer crystallization and ferroelectricity will show ultrathin film effects . The study here investigated the birefringence as a function of thickness for PPXC in the as - deposited condition and PPXN as ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films