Materials Research Society Symposia Proceedings, Volume 511 |
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Page 139
OPTICAL BIREFRINGENCE TO DETERMINE MORPHOLOGICAL CHANGES IN
LOW-K THIN FILM CVD POLYMERS JAY J. SENKEVICH, VIKTOR SIMKOVIC,
SESHU B. DESU Virginia Tech, Dept. of Materials Science and Engineering, 213
...
OPTICAL BIREFRINGENCE TO DETERMINE MORPHOLOGICAL CHANGES IN
LOW-K THIN FILM CVD POLYMERS JAY J. SENKEVICH, VIKTOR SIMKOVIC,
SESHU B. DESU Virginia Tech, Dept. of Materials Science and Engineering, 213
...
Page 140
OPTICAL BIREFINGECE OF CVD POLYMER THIN FILMS The birefringence
defined here as: A. = nin-plane - Hout-of-plane (1) is reflective of the in-plane and
out-of-plane electronic polarization of the thin film and is indiscriminate of
whether ...
OPTICAL BIREFINGECE OF CVD POLYMER THIN FILMS The birefringence
defined here as: A. = nin-plane - Hout-of-plane (1) is reflective of the in-plane and
out-of-plane electronic polarization of the thin film and is indiscriminate of
whether ...
Page 143
such as polymer crystallization and ferroelectricity will show ultrathin film effects.
The study here investigated the birefringence as a function of thickness for PPXC
in the as-deposited condition and PPXN as-deposited, after a 200°C anneal, ...
such as polymer crystallization and ferroelectricity will show ultrathin film effects.
The study here investigated the birefringence as a function of thickness for PPXC
in the as-deposited condition and PPXN as-deposited, after a 200°C anneal, ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
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1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel