Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 29
... bonds and a loose one at 830cm1 from Si - O bonds . A peak at 1410cm1 from Si - C bonds was not clearly resolved due to large noise . Peaks at 2910cm1 and 2970cm1 came from C - H bonds . Peaks at 1200cm1 and 1110cm1 from O - C2H , bonds ...
... bonds and a loose one at 830cm1 from Si - O bonds . A peak at 1410cm1 from Si - C bonds was not clearly resolved due to large noise . Peaks at 2910cm1 and 2970cm1 came from C - H bonds . Peaks at 1200cm1 and 1110cm1 from O - C2H , bonds ...
Page 171
... bonds " deleted . " Two factors then contribute to the tendency of SSQ SOG thin films to stress - corrosion cracking ... bonds in silicates and silsesquioxanes lead to similar inate susceptibilities of strained , crack - tip primary ...
... bonds " deleted . " Two factors then contribute to the tendency of SSQ SOG thin films to stress - corrosion cracking ... bonds in silicates and silsesquioxanes lead to similar inate susceptibilities of strained , crack - tip primary ...
Page 174
... bond density is consistent with that for a fully polymerized SSQ but that the assumption of unaltered SiO2 bonds overestimates the fracture resistance of SSQ bonds for these curing conditions . The dashed line is a best fit to the SSQ ...
... bond density is consistent with that for a fully polymerized SSQ but that the assumption of unaltered SiO2 bonds overestimates the fracture resistance of SSQ bonds for these curing conditions . The dashed line is a best fit to the SSQ ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films