Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 83
... bulk polytetrafluoroethylene ( PTFE ) , 37 and is most likely due to the high CF2 fractions in these films , also ... bulk PTFE is 0.0002,37 so the tan 8 of the films from HFPO is surprisingly close to that of bulk PTFE when considering ...
... bulk polytetrafluoroethylene ( PTFE ) , 37 and is most likely due to the high CF2 fractions in these films , also ... bulk PTFE is 0.0002,37 so the tan 8 of the films from HFPO is surprisingly close to that of bulk PTFE when considering ...
Page 99
... bulk silica gels [ 1 ] . Yamane and Okano [ 15 ] found that the porosity and the average pore size of bulk gels increased rapidly as the aging temperature was increased from 54 to 70 ° C . Davis et al . [ 16 ] showed that increasing the ...
... bulk silica gels [ 1 ] . Yamane and Okano [ 15 ] found that the porosity and the average pore size of bulk gels increased rapidly as the aging temperature was increased from 54 to 70 ° C . Davis et al . [ 16 ] showed that increasing the ...
Page 310
... bulk diffusivity below 600 ° C in Eq . ( 2 ) can be omitted , since the diffusivity27 of bulk is several orders of magnitude less than that of grain boundary 24,25 and surface26 . Also the electroplated Cu tested lines were shown to ...
... bulk diffusivity below 600 ° C in Eq . ( 2 ) can be omitted , since the diffusivity27 of bulk is several orders of magnitude less than that of grain boundary 24,25 and surface26 . Also the electroplated Cu tested lines were shown to ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films