Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 52
Page 4
... capacitance standpoint , sidewall capacitance dominates as interconnect design rules scale , as shown in Figure 3. Thus it is important to provide the lowest dielectric constant for the insulator between adjacent metal leads . Lower ...
... capacitance standpoint , sidewall capacitance dominates as interconnect design rules scale , as shown in Figure 3. Thus it is important to provide the lowest dielectric constant for the insulator between adjacent metal leads . Lower ...
Page 146
... capacitance in pF , and A is the metal plate area . The capacitance , C , was measured directly using an HP4192A Impedance Analyzer at 1MHz . Because the metal dot diameters are much larger than the film thickness , the fringe capacitance ...
... capacitance in pF , and A is the metal plate area . The capacitance , C , was measured directly using an HP4192A Impedance Analyzer at 1MHz . Because the metal dot diameters are much larger than the film thickness , the fringe capacitance ...
Page 218
... capacitance reduction of 35 % compared to HDP oxide and 14 % reduction compared to HSQ . Raphael modeling of these structures gives a fitted xerogel capacitance of 2.0 . All the structures except the xerogel etchback structures show ...
... capacitance reduction of 35 % compared to HDP oxide and 14 % reduction compared to HSQ . Raphael modeling of these structures gives a fitted xerogel capacitance of 2.0 . All the structures except the xerogel etchback structures show ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films