Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 260
... carbide ( a - SiC : H ) caps / liners were deposited from C2H2 / H2 and C2H2 / SiH4 respectively with conditions dependent on deposition method . Films were deposited on reclaimed Si wafers . Two different reactor platforms , PECVD and ...
... carbide ( a - SiC : H ) caps / liners were deposited from C2H2 / H2 and C2H2 / SiH4 respectively with conditions dependent on deposition method . Films were deposited on reclaimed Si wafers . Two different reactor platforms , PECVD and ...
Page 264
... carbide ( 2000 Å , deposited in - situ with HDP - FIAC stack ) or PECVD SiN , ( 2000 Å ) as the hard mask material , the films began to blister after the 4th level , with the failures becoming more severe at the 5th level . Samples ...
... carbide ( 2000 Å , deposited in - situ with HDP - FIAC stack ) or PECVD SiN , ( 2000 Å ) as the hard mask material , the films began to blister after the 4th level , with the failures becoming more severe at the 5th level . Samples ...
Page 379
... carbide - like compound during metallization . The mechanism of adhesion enhancement by RF plasma treatment in the Cr / PI system seems to operate in the AI / PI system . Chenite et al . reported that Al reacted with carbonyl groups at ...
... carbide - like compound during metallization . The mechanism of adhesion enhancement by RF plasma treatment in the Cr / PI system seems to operate in the AI / PI system . Chenite et al . reported that Al reacted with carbonyl groups at ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films