Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 48
Page 63
... carbon were implanted into SiO2 films by CF4 PII using an ICP plasma reactor . The effective dielectric constant of the films was significantly reduced after PII doping . An analysis of a double layer model indicated that a high quality ...
... carbon were implanted into SiO2 films by CF4 PII using an ICP plasma reactor . The effective dielectric constant of the films was significantly reduced after PII doping . An analysis of a double layer model indicated that a high quality ...
Page 293
... carbon ILD . Furthermore , the patterning process requires a suppressing the reflection of the metal . Conventional aluminum wiring technology uses titanium nitride as an anti - reflection layer for aluminum . Thus , a polished Cu ...
... carbon ILD . Furthermore , the patterning process requires a suppressing the reflection of the metal . Conventional aluminum wiring technology uses titanium nitride as an anti - reflection layer for aluminum . Thus , a polished Cu ...
Page 385
... carbon , 259 , 365 anisotropy , 139 BaMg1 / 3 Ta2 / 303 ( BMT ) , 165 benzocyclobutene , 183 BEOL , 223 bias - temperature stress , 317 capacitance - voltage measurements , 317 carbon- fluorine films , 371 silicon polymeric films , 297 ...
... carbon , 259 , 365 anisotropy , 139 BaMg1 / 3 Ta2 / 303 ( BMT ) , 165 benzocyclobutene , 183 BEOL , 223 bias - temperature stress , 317 capacitance - voltage measurements , 317 carbon- fluorine films , 371 silicon polymeric films , 297 ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films