Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 108
... cause defects . In order to achieve both high porosity and small pore size , the surface area of the nanoporous silica must be high ( > 500 m2 / g ) . However , in order to achieve maximum strength for a given density , the surface area ...
... cause defects . In order to achieve both high porosity and small pore size , the surface area of the nanoporous silica must be high ( > 500 m2 / g ) . However , in order to achieve maximum strength for a given density , the surface area ...
Page 206
... caused by solvent vapors that were trapped in the film . A Figures 2a and 2b . Examples unoptimized ( a ) , and optimized ( b ) polymer spin and cure processes . Overly aggressive spin and cure processes can cause film to densify too ...
... caused by solvent vapors that were trapped in the film . A Figures 2a and 2b . Examples unoptimized ( a ) , and optimized ( b ) polymer spin and cure processes . Overly aggressive spin and cure processes can cause film to densify too ...
Page 370
... cause the reaction and degradation at the interface . We did not observe any generation of CH groups in the film after H , annealing . This indicates that the diffused H , reacts with only trapped radicals and substitution of the C - F ...
... cause the reaction and degradation at the interface . We did not observe any generation of CH groups in the film after H , annealing . This indicates that the diffused H , reacts with only trapped radicals and substitution of the C - F ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films