Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 184
... change in capacitance of the IDE is primarily because of changes in dielectric permittivity of the polymer . In case of a thermal load , corrections can be made for expansion of the substrate . The change in dielectric permittivity can ...
... change in capacitance of the IDE is primarily because of changes in dielectric permittivity of the polymer . In case of a thermal load , corrections can be made for expansion of the substrate . The change in dielectric permittivity can ...
Page 236
... change after outgassing can be understood from the FTIR spectra measured before and after annealing , shown in Fig . 3. The noticeable changes in the FTIR spectrum are the growth of the band at 1450 cm1 and 1620 cm ' . Similar change ...
... change after outgassing can be understood from the FTIR spectra measured before and after annealing , shown in Fig . 3. The noticeable changes in the FTIR spectrum are the growth of the band at 1450 cm1 and 1620 cm ' . Similar change ...
Page 238
... changes is the reduction of the dielectric constant from 2.6 to 2.4 . Most importantly , these changes occur only at the initial stage of annealing . The mechanical , chemical and electrical properties of the a - F : C film tend to be ...
... changes is the reduction of the dielectric constant from 2.6 to 2.4 . Most importantly , these changes occur only at the initial stage of annealing . The mechanical , chemical and electrical properties of the a - F : C film tend to be ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films