Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 85
R. Savage , R. B. Timmons , and J. W. Lin , in Advances in Chemistry Series ; Vol . 236 ( American Chemical Society , 1993 ) , p . 745-768 . SK . Endo , MRS Bulletin 22 , 55-58 ( 1997 ) . 6K . Endo and T. Tatsumi , J. Appl . Phys .
R. Savage , R. B. Timmons , and J. W. Lin , in Advances in Chemistry Series ; Vol . 236 ( American Chemical Society , 1993 ) , p . 745-768 . SK . Endo , MRS Bulletin 22 , 55-58 ( 1997 ) . 6K . Endo and T. Tatsumi , J. Appl . Phys .
Page 278
Chemicals also could play an important secondary role of passivating the surface being polished until the time ... The chemical phenomena occur at the metal surface , at the pad , and at the slurry - particle surface leading to metal ...
Chemicals also could play an important secondary role of passivating the surface being polished until the time ... The chemical phenomena occur at the metal surface , at the pad , and at the slurry - particle surface leading to metal ...
Page 282
Thus Ab - layer is a reaction product and its thickness is a function of chemical composition of the slurry and the nature of chemicals , temperature , stress or load , the effective net diffusion coefficient , and the surface damage ...
Thus Ab - layer is a reaction product and its thickness is a function of chemical composition of the slurry and the nature of chemicals , temperature , stress or load , the effective net diffusion coefficient , and the surface damage ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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addition adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel