Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 75
Pulsed Plasma Enhanced Chemical Vapor Deposition from CH2F2 , C2H2F4 , and CHCIF2 Catherine B. Labelle , Kenneth K. S. Lau and Karen K. Gleason Department of Chemical Engineering , MIT Cambridge , MA 02139 ABSTRACT Pulsed plasma ...
Pulsed Plasma Enhanced Chemical Vapor Deposition from CH2F2 , C2H2F4 , and CHCIF2 Catherine B. Labelle , Kenneth K. S. Lau and Karen K. Gleason Department of Chemical Engineering , MIT Cambridge , MA 02139 ABSTRACT Pulsed plasma ...
Page 86
... Chemical Society , Chemical Communications , 465-466 ( 1971 ) . 32A . D. Tserepi , J. Derouard , J. P. Booth , and N ... Vapor Deposition , San Francisco , CA , 1998 . 39J . A. Theil , F. Mertz , M. Yairi , K. Seaward , G. Ray , and G. Kooi , ...
... Chemical Society , Chemical Communications , 465-466 ( 1971 ) . 32A . D. Tserepi , J. Derouard , J. P. Booth , and N ... Vapor Deposition , San Francisco , CA , 1998 . 39J . A. Theil , F. Mertz , M. Yairi , K. Seaward , G. Ray , and G. Kooi , ...
Page 348
... deposited using an electron cyclotron resonance chemical vapor deposition ( ECRCVD ) system ( AsTeX Model AX4505 ) which consisted of two chambers , a plasma generation chamber and a reaction chamber . Deposition of films was then ...
... deposited using an electron cyclotron resonance chemical vapor deposition ( ECRCVD ) system ( AsTeX Model AX4505 ) which consisted of two chambers , a plasma generation chamber and a reaction chamber . Deposition of films was then ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films