Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 111
... coating . The parameters for spin coating ( spin speed , gelation time , gel composition , etc. ) have been optimized and coherent films with thicknesses ranging from 0.7-2.0 μm can be reproducibly fabricated . Preliminary work shows ...
... coating . The parameters for spin coating ( spin speed , gelation time , gel composition , etc. ) have been optimized and coherent films with thicknesses ranging from 0.7-2.0 μm can be reproducibly fabricated . Preliminary work shows ...
Page 134
... coatings from 0.1 μm to 20 μm coatings without cracking ; excellent planarization and uniformity [ 9 ] ; and dry etchable ... coating , and E and v are the coatings Young's modulus and Poisson's ratio . For multilayer systems the steady ...
... coatings from 0.1 μm to 20 μm coatings without cracking ; excellent planarization and uniformity [ 9 ] ; and dry etchable ... coating , and E and v are the coatings Young's modulus and Poisson's ratio . For multilayer systems the steady ...
Page 214
... coating . As illustrated in Figure 2 , major process steps consist of spin coating , aging , and drying . The precursor is dispensed onto a substrate and spin - coated to produce a uniform film . Ethanol typically is used as the common ...
... coating . As illustrated in Figure 2 , major process steps consist of spin coating , aging , and drying . The precursor is dispensed onto a substrate and spin - coated to produce a uniform film . Ethanol typically is used as the common ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films