Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 42
Page 35
... compared with that of SiO2 which is less than that of Si . The consequence of the latter is that SOG thin films are in a state of tension after processing compared with compression for SiO2 . An implication is that SSQ SOG films will ...
... compared with that of SiO2 which is less than that of Si . The consequence of the latter is that SOG thin films are in a state of tension after processing compared with compression for SiO2 . An implication is that SSQ SOG films will ...
Page 171
... compared with observed steady - state crack velocities as a function of film thickness and variations in the curing process . An implication is that , on curing , the driving force for film fracture , determined by thermal expansion ...
... compared with observed steady - state crack velocities as a function of film thickness and variations in the curing process . An implication is that , on curing , the driving force for film fracture , determined by thermal expansion ...
Page 218
... compared to HDP oxide and 14 % reduction compared to HSQ . Raphael modeling of these structures gives a fitted xerogel capacitance of 2.0 . All the structures except the xerogel etchback structures show similarly tight distributions ...
... compared to HDP oxide and 14 % reduction compared to HSQ . Raphael modeling of these structures gives a fitted xerogel capacitance of 2.0 . All the structures except the xerogel etchback structures show similarly tight distributions ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films