Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 115
... Composition 10:90 20:80 △ 30:70 CONCLUSIONS Thin films of porous silica have been produced from a sol - gel process utilizing relatively inexpensive precursors of colloidal silica , potassium silicate , and formamide . Coherent films ...
... Composition 10:90 20:80 △ 30:70 CONCLUSIONS Thin films of porous silica have been produced from a sol - gel process utilizing relatively inexpensive precursors of colloidal silica , potassium silicate , and formamide . Coherent films ...
Page 136
... composition for as - deposited BCB is 87 % carbon , 7 % silicon and 6 % oxygen . This is oxygen rich compared to the stoichiometry for BCB . However , if the BCB is sputter cleaned with N2 for 30 s in vacuum the atomic composition of ...
... composition for as - deposited BCB is 87 % carbon , 7 % silicon and 6 % oxygen . This is oxygen rich compared to the stoichiometry for BCB . However , if the BCB is sputter cleaned with N2 for 30 s in vacuum the atomic composition of ...
Page 297
... composition parallels precursor composition . We also present Auger data which indicate that such films are potential candidates for Cu diffusion barriers even at thicknesses of ~ 100 Å . Films polymerized in the presence of adsorbed ...
... composition parallels precursor composition . We also present Auger data which indicate that such films are potential candidates for Cu diffusion barriers even at thicknesses of ~ 100 Å . Films polymerized in the presence of adsorbed ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films