Materials Research Society Symposia Proceedings, Volume 511 |
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Page 81
(6) However, since the CF concentration observed in the C2H2F4 pulsed plasma
film is slighdy higher than the CF2 concentration, it may be that the further
decomposition of C2F4 to 2 CF2 is limiting. It is interesting to note that the two ...
(6) However, since the CF concentration observed in the C2H2F4 pulsed plasma
film is slighdy higher than the CF2 concentration, it may be that the further
decomposition of C2F4 to 2 CF2 is limiting. It is interesting to note that the two ...
Page 127
RBS and PIXE are less sensitive for low mass elements at low concentrations.
Sputtering induced interactions in secondary ion mass spectroscopy (SIMS) may
complicate interpretation of results and the technique requires standards of
similar ...
RBS and PIXE are less sensitive for low mass elements at low concentrations.
Sputtering induced interactions in secondary ion mass spectroscopy (SIMS) may
complicate interpretation of results and the technique requires standards of
similar ...
Page 368
The hydrogen concentration at the surface in Fig. 4 was almost the same in the
two samples. However the surface hydrogen signal decreased as the total dose
of He ions increased. Thus, the initial concentration of surface hydrogen was ...
The hydrogen concentration at the surface in Fig. 4 was almost the same in the
two samples. However the surface hydrogen signal decreased as the total dose
of He ions increased. Thus, the initial concentration of surface hydrogen was ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
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1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel