Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 81
... concentration than HF , 19 indicating that reaction ( 2 ) is more prevalent than the HF elimination reaction , 23,31 C , H , FHF + C , HF ,. ( 6 ) However , since the CF concentration observed in the C2H2F4 pulsed plasma film is ...
... concentration than HF , 19 indicating that reaction ( 2 ) is more prevalent than the HF elimination reaction , 23,31 C , H , FHF + C , HF ,. ( 6 ) However , since the CF concentration observed in the C2H2F4 pulsed plasma film is ...
Page 127
... concentration at a given depth is directly proportional to the measured gamma ray output . For calibration of concentration scale we have used CaF2 thick crystals and a known amount of fluorine implanted in Si wafers as our standards ...
... concentration at a given depth is directly proportional to the measured gamma ray output . For calibration of concentration scale we have used CaF2 thick crystals and a known amount of fluorine implanted in Si wafers as our standards ...
Page 368
... concentration at the surface to 71 % for the CF + CH , film and 40 % for the CF film . The higher hydrogen concentration at the surface from adsorbed water for the CH , film indicates that the surface of this film was hydrophilic and ...
... concentration at the surface to 71 % for the CF + CH , film and 40 % for the CF film . The higher hydrogen concentration at the surface from adsorbed water for the CH , film indicates that the surface of this film was hydrophilic and ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films