Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 99
... copper is orders of magnitude faster in these xerogels than in the corresponding thermal oxide . An activation energy of 0.9 eV was estimated based on a convective diffusion model . INTRODUCTION Silica xerogels offer promise as ultra ...
... copper is orders of magnitude faster in these xerogels than in the corresponding thermal oxide . An activation energy of 0.9 eV was estimated based on a convective diffusion model . INTRODUCTION Silica xerogels offer promise as ultra ...
Page 101
... copper penetration was measured using RBS after the surface copper was removed . RESULTS Figure 1 shows the effect of aging time on the porosity and thickness of the xerogel films at temperatures between 45 and 60 ° C . Aging for longer ...
... copper penetration was measured using RBS after the surface copper was removed . RESULTS Figure 1 shows the effect of aging time on the porosity and thickness of the xerogel films at temperatures between 45 and 60 ° C . Aging for longer ...
Page 230
... copper polish process ILD polish rate relative to silicon oxide 1.0X 2.5X Integration results The results of a single level damascene copper integration effort are shown in Figure 4 . The DLC utilized in this structure had a dielectric ...
... copper polish process ILD polish rate relative to silicon oxide 1.0X 2.5X Integration results The results of a single level damascene copper integration effort are shown in Figure 4 . The DLC utilized in this structure had a dielectric ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films