Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 44
... cure temperature is increased to 450 ° C . However , for curing temperature of 500 ° C or above MSQ exhibits a similar shift in the intensities of the O - Si - O stretches as seen for HSQ . It is worth pointing out that the cure ...
... cure temperature is increased to 450 ° C . However , for curing temperature of 500 ° C or above MSQ exhibits a similar shift in the intensities of the O - Si - O stretches as seen for HSQ . It is worth pointing out that the cure ...
Page 45
... temperature for MSQ films cured at the temperature ( ° C ) indicated . The loss are displaced vertically for clarity . curves The study on the cure temperature versus dielectric behavior for silsesquioxanes suggests a close connection ...
... temperature for MSQ films cured at the temperature ( ° C ) indicated . The loss are displaced vertically for clarity . curves The study on the cure temperature versus dielectric behavior for silsesquioxanes suggests a close connection ...
Page 175
... Cure 1E - 4 1E - 6 1E - 8 1E - 10 0.25,400 420 D 350 420 Fused Silica Din 425 460 4.400 450 460 D9 440 Increasing Curing Time or Temperature 1E - 12 0 1 2 3 Crack Driving Force , G ( J m2 ) Figure 3. Plot of crack velocity vs crack ...
... Cure 1E - 4 1E - 6 1E - 8 1E - 10 0.25,400 420 D 350 420 Fused Silica Din 425 460 4.400 450 460 D9 440 Increasing Curing Time or Temperature 1E - 12 0 1 2 3 Crack Driving Force , G ( J m2 ) Figure 3. Plot of crack velocity vs crack ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films