Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 31
Page 44
... cured to 210 ° C , the absorption of the lower energy stretch at 1050 cm1 becomes stronger than that for the higher energy stretch at 1140 cm1 , indicating the dominance of " asymmetric ” O - Si - O ring structures . This structure is ...
... cured to 210 ° C , the absorption of the lower energy stretch at 1050 cm1 becomes stronger than that for the higher energy stretch at 1140 cm1 , indicating the dominance of " asymmetric ” O - Si - O ring structures . This structure is ...
Page 52
... Cured SOP CVD Oxides Wet Etch Rate ( Å / Sec . ) S O 309 Thermal Oxide 1000 2000 3000 4000 5000 6000 Depth into Film ( Å ) Fig . 6 : Wet etch rates as a function of depth for full e- beam cured , variable energy e - beam cured and depth ...
... Cured SOP CVD Oxides Wet Etch Rate ( Å / Sec . ) S O 309 Thermal Oxide 1000 2000 3000 4000 5000 6000 Depth into Film ( Å ) Fig . 6 : Wet etch rates as a function of depth for full e- beam cured , variable energy e - beam cured and depth ...
Page 54
... cured hydrogen silsesquioxane polymer unchanged after exposure up to 900 ° C for 60 minutes . This suggests that fully e - beam cured films have sufficient thermal stability and mechanical strength to withstand subsequent processes ...
... cured hydrogen silsesquioxane polymer unchanged after exposure up to 900 ° C for 60 minutes . This suggests that fully e - beam cured films have sufficient thermal stability and mechanical strength to withstand subsequent processes ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films