Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 34
... curing at 350-450 ° C in N2 for 0.5-4 hr , producing bulk polymerization and a hard film . Materials Characterization Film thicknesses were measured by profilometer traces of etched dot patterns and by ellipsometry . Dielectric ...
... curing at 350-450 ° C in N2 for 0.5-4 hr , producing bulk polymerization and a hard film . Materials Characterization Film thicknesses were measured by profilometer traces of etched dot patterns and by ellipsometry . Dielectric ...
Page 44
... curing at 410 ° C , while the intensity of the lower energy stretch at 1070 cm1 increases . For MSQ the uncured pre - polymer sample appears to have a more " symmetric " Si ring structure as seen by the stronger absorption at 1140 cm1 ...
... curing at 410 ° C , while the intensity of the lower energy stretch at 1070 cm1 increases . For MSQ the uncured pre - polymer sample appears to have a more " symmetric " Si ring structure as seen by the stronger absorption at 1140 cm1 ...
Page 175
... Curing Time or Temperature 1E - 12 0 1 2 3 Crack Driving Force , G ( J m2 ) Figure 3. Plot of crack velocity vs crack driving force for SSQ SOG materials cured with different time - temperature conditions : longer curing times and greater ...
... Curing Time or Temperature 1E - 12 0 1 2 3 Crack Driving Force , G ( J m2 ) Figure 3. Plot of crack velocity vs crack driving force for SSQ SOG materials cured with different time - temperature conditions : longer curing times and greater ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films