Materials Research Society Symposia Proceedings, Volume 511

1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel