Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 5
... damascene approach . The subtractive etch method has been traditionally used with aluminum metallization , and employs pattern / etch of the metal to form the conductors followed by dielectric deposition / planarization for electrical ...
... damascene approach . The subtractive etch method has been traditionally used with aluminum metallization , and employs pattern / etch of the metal to form the conductors followed by dielectric deposition / planarization for electrical ...
Page 8
... damascene process . As the conductor height : space aspect ratio ( AR ) increases due to scaling , dielectric gapfill becomes more and more challenging , particularly for nonconformal CVD processes . Spin - on dielectrics are typically ...
... damascene process . As the conductor height : space aspect ratio ( AR ) increases due to scaling , dielectric gapfill becomes more and more challenging , particularly for nonconformal CVD processes . Spin - on dielectrics are typically ...
Page 291
Copper damascene using low dielectric constant fluorinated amorphous carbon interlayer Y. Matsubara * , K. Endo ** M ... damascene process which involves inlaid , planarized metal ( CMP ) in the via / line insulator cavity [ 1 ] . The ...
Copper damascene using low dielectric constant fluorinated amorphous carbon interlayer Y. Matsubara * , K. Endo ** M ... damascene process which involves inlaid , planarized metal ( CMP ) in the via / line insulator cavity [ 1 ] . The ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films