Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 86
Page 8
... decrease events have the one strikingly common characteristic of a temporary decrease of solar emission . Hence they might be expected to originate from the same physical mechanism . Apparently , they both signify a phenomenon of ...
... decrease events have the one strikingly common characteristic of a temporary decrease of solar emission . Hence they might be expected to originate from the same physical mechanism . Apparently , they both signify a phenomenon of ...
Page 10
... decrease of discharge at the lower and mean stages can only show itself in a diminished degree . Mr. Berghaus explained the circumstance that the decrease in the low and mean stages at Emmerich are greater than at Cologne by the fact ...
... decrease of discharge at the lower and mean stages can only show itself in a diminished degree . Mr. Berghaus explained the circumstance that the decrease in the low and mean stages at Emmerich are greater than at Cologne by the fact ...
Page 255
... decrease (multiple), 186–88 p4tog and p4tog tbl multiple decrease, 174–75 working the p4tog, 176 working the p4tog tbl, 177 pass over decrease (multiple), 189–91. R. reverse stockinette stitch bobbles, 198–200 decrease swatches, 167, 175 ...
... decrease (multiple), 186–88 p4tog and p4tog tbl multiple decrease, 174–75 working the p4tog, 176 working the p4tog tbl, 177 pass over decrease (multiple), 189–91. R. reverse stockinette stitch bobbles, 198–200 decrease swatches, 167, 175 ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films