Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 14
Page 18
... defects . The surface defect density and hence the sticking coefficient can be largely increased by ion treatment . For Ag on TMC polycarbonate , for instance , the initial cluster density at an untreated surface is typically 1011 cm2 ...
... defects . The surface defect density and hence the sticking coefficient can be largely increased by ion treatment . For Ag on TMC polycarbonate , for instance , the initial cluster density at an untreated surface is typically 1011 cm2 ...
Page 241
... defects are likely to form in various processing steps and there is a constant need for the new processes to reduce the defects . To achieve lower defects , it is important that the new Mat . Res . Soc . Symp . Proc . Vol . 511 © 1998 ...
... defects are likely to form in various processing steps and there is a constant need for the new processes to reduce the defects . To achieve lower defects , it is important that the new Mat . Res . Soc . Symp . Proc . Vol . 511 © 1998 ...
Page 242
... defects normally refer to morphological and visibly observable faults like line defects , point defects , dislocations etc. There exists a relationship between microscopic and macroscopic defects . Defects are eventually manifested in ...
... defects normally refer to morphological and visibly observable faults like line defects , point defects , dislocations etc. There exists a relationship between microscopic and macroscopic defects . Defects are eventually manifested in ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films