Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 49
Page 44
In summary , results from IR spectroscopy suggest the onset of chemical
transformation ( i . e . , three - dimensional cross - linking reaction ) for each of
these silsesquioxanes is highly dependent on the R group . The chemical
transformation in ...
In summary , results from IR spectroscopy suggest the onset of chemical
transformation ( i . e . , three - dimensional cross - linking reaction ) for each of
these silsesquioxanes is highly dependent on the R group . The chemical
transformation in ...
Page 313
E . Current density dependence Fig . ... The value of n = 1 is consistent with a
growth of a single void in the pure metal , while the value of n > 1 is dependent
on the power used and thermal conductivity of surrounding material and ambient
...
E . Current density dependence Fig . ... The value of n = 1 is consistent with a
growth of a single void in the pure metal , while the value of n > 1 is dependent
on the power used and thermal conductivity of surrounding material and ambient
...
Page 364
In order to describe expansion phenomena phenomenologically , the humidity -
dependent expansion and stress ... The dependence of mechanical properties
such as Young ' s modulus and Poisson ' s ratio on the relative humidity have not
...
In order to describe expansion phenomena phenomenologically , the humidity -
dependent expansion and stress ... The dependence of mechanical properties
such as Young ' s modulus and Poisson ' s ratio on the relative humidity have not
...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
42 other sections not shown
Other editions - View all
Common terms and phrases
adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558994173, 9781558994171 |
| Export Citation | BiBTeX EndNote RefMan |