Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 39
... dependence are seen for dielectric constants of silsesquioxane samples with little loss of Si - R absorbance . INTRODUCTION As the feature dimension in integrated circuits continues to shrink , insulating materials with lower dielectric ...
... dependence are seen for dielectric constants of silsesquioxane samples with little loss of Si - R absorbance . INTRODUCTION As the feature dimension in integrated circuits continues to shrink , insulating materials with lower dielectric ...
Page 44
... dependence of dielectric constants . However , as the curing temperature is increased to 500 ° C , a similar transition in the temperature dependence of dielectric behavior is observed for MSQ as found for HSQ , namely , changing from a ...
... dependence of dielectric constants . However , as the curing temperature is increased to 500 ° C , a similar transition in the temperature dependence of dielectric behavior is observed for MSQ as found for HSQ , namely , changing from a ...
Page 46
... dependence of the dielectric constant for this family of silsesquioxanes . The nature of negative temperature dependence of dielectric constants for silsesquioxanes , observed for samples prior to the onset of three - dimensional ...
... dependence of the dielectric constant for this family of silsesquioxanes . The nature of negative temperature dependence of dielectric constants for silsesquioxanes , observed for samples prior to the onset of three - dimensional ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films