Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 97
... deposited at the lowest plasma duty cycle exhibited significantly less increase than samples deposited at higher duty cycles , as shown in Figure 3 . Higher temperature curing was employed with films obtained from the PAB monomer ...
... deposited at the lowest plasma duty cycle exhibited significantly less increase than samples deposited at higher duty cycles , as shown in Figure 3 . Higher temperature curing was employed with films obtained from the PAB monomer ...
Page 143
... deposited condition and PPXN as - deposited , after a 200 ° C anneal , and after a 325 ° C anneal . Above a critical thickness of ~ 112nm PPXN's as - deposited birefringence changed only slightly as a function of thickness at least up ...
... deposited condition and PPXN as - deposited , after a 200 ° C anneal , and after a 325 ° C anneal . Above a critical thickness of ~ 112nm PPXN's as - deposited birefringence changed only slightly as a function of thickness at least up ...
Page 260
... deposited from C2H2 / H2 and C2H2 / SiH4 respectively with conditions dependent on deposition method . Films were deposited on reclaimed Si wafers . Two different reactor platforms , PECVD and HDP , were used to generate the FLAC , a ...
... deposited from C2H2 / H2 and C2H2 / SiH4 respectively with conditions dependent on deposition method . Films were deposited on reclaimed Si wafers . Two different reactor platforms , PECVD and HDP , were used to generate the FLAC , a ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films