Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 79
Page 8
From a dielectric integration standpoint , the most notable difference between the
two approaches is the need for dielectric gapfill following subtractive metal etch
as compared with the use of planar dielectric deposition in the damascene ...
From a dielectric integration standpoint , the most notable difference between the
two approaches is the need for dielectric gapfill following subtractive metal etch
as compared with the use of planar dielectric deposition in the damascene ...
Page 77
RESULTS AND DISCUSSION Deposition Rates Figure 1 shows the deposition
rates per pulse cycle for CH2F2 , C2H2F4 , CHCIF2 , and HFPO as a function of
pulse off time for a constant pulse on time of 10 ms . All four precursors show an ...
RESULTS AND DISCUSSION Deposition Rates Figure 1 shows the deposition
rates per pulse cycle for CH2F2 , C2H2F4 , CHCIF2 , and HFPO as a function of
pulse off time for a constant pulse on time of 10 ms . All four precursors show an ...
Page 78
CHF , CHCIF , HFPO Deposition Rate ( Alcycle ) split further into one - C species
or exhausted from the reactor since negligible oxygen is found in the deposited
film . 15 , 16 Regardless , the deposition mechanism would involve single ...
CHF , CHCIF , HFPO Deposition Rate ( Alcycle ) split further into one - C species
or exhausted from the reactor since negligible oxygen is found in the deposited
film . 15 , 16 Regardless , the deposition mechanism would involve single ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
42 other sections not shown
Other editions - View all
Common terms and phrases
adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558994173, 9781558994171 |
| Export Citation | BiBTeX EndNote RefMan |