Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 77
... Deposition Rates Figure 1 shows the deposition rates per pulse cycle for CH2F2 , C2H2F4 , CHCIF2 , and HFPO as a function of pulse off time for a constant pulse on time of 10 ms . All four precursors show an initial increase in deposition ...
... Deposition Rates Figure 1 shows the deposition rates per pulse cycle for CH2F2 , C2H2F4 , CHCIF2 , and HFPO as a function of pulse off time for a constant pulse on time of 10 ms . All four precursors show an initial increase in deposition ...
Page 78
Deposition Rate ( A / cycle ) 3.0 CHF CHF2 2.5 CHCIF HFPO 2.0- 1.5 1.0- 0.5- 0.0 0 50 100 150 200 250 300 350 400 Pulse Off Time ( ms ) Figure 1. Deposition rate per pulse cycle versus pulse off time for a constant pulse on time of 10 ...
Deposition Rate ( A / cycle ) 3.0 CHF CHF2 2.5 CHCIF HFPO 2.0- 1.5 1.0- 0.5- 0.0 0 50 100 150 200 250 300 350 400 Pulse Off Time ( ms ) Figure 1. Deposition rate per pulse cycle versus pulse off time for a constant pulse on time of 10 ...
Page 79
Deposition Rate ( A / cycle ) 5.0 CHCIF HFPO 4.0 - 3.0- 2.0- 1.0- 0.0 S 10 15 25 20 Pulse On Time ( ms ) ( a ) Deposition Rate ( A / cycle ) 6.0 C , H , F . 5.0 CH , F , 4.0- 3.0 2.0- 1.0k 0.0 30 35 40 5 10 15 20 25 30 35 Pulse On Time ...
Deposition Rate ( A / cycle ) 5.0 CHCIF HFPO 4.0 - 3.0- 2.0- 1.0- 0.0 S 10 15 25 20 Pulse On Time ( ms ) ( a ) Deposition Rate ( A / cycle ) 6.0 C , H , F . 5.0 CH , F , 4.0- 3.0 2.0- 1.0k 0.0 30 35 40 5 10 15 20 25 30 35 Pulse On Time ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films