Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 51
... depth - controlled e - beam irradiation approach [ 4 ] . In both cases , the e - beam modified surface layer protected the underlying non - e- beam exposed layer . These favorable features of e - beam modified films may be attributed to ...
... depth - controlled e - beam irradiation approach [ 4 ] . In both cases , the e - beam modified surface layer protected the underlying non - e- beam exposed layer . These favorable features of e - beam modified films may be attributed to ...
Page 52
... depth - controlled e- beam curing results in a sharp transition in the wet etch rate at a film depth of around 1200 Å , an indication that the top 1200 A thick layer is distinctively different from the underlying material . From this ...
... depth - controlled e- beam curing results in a sharp transition in the wet etch rate at a film depth of around 1200 Å , an indication that the top 1200 A thick layer is distinctively different from the underlying material . From this ...
Page 128
... Depth in Microns Absolute Conc F / Total Atoms -0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 Depth in Microns Figure 3. Fluorine depth profile of CaF2 crystal . Figure 4. Fluorine depth profile of 1E16 fluorine implant in Si . We have ...
... Depth in Microns Absolute Conc F / Total Atoms -0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 Depth in Microns Figure 3. Fluorine depth profile of CaF2 crystal . Figure 4. Fluorine depth profile of 1E16 fluorine implant in Si . We have ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films