Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 31
... desorption of C. From the relative area of the decomposed components , Si - Si bonds were estimated about 10 % . Since these Si - Si bonds , although low in density , are well known to seriously deteriorate electronic properties of the ...
... desorption of C. From the relative area of the decomposed components , Si - Si bonds were estimated about 10 % . Since these Si - Si bonds , although low in density , are well known to seriously deteriorate electronic properties of the ...
Page 60
value of water is as high as 80 , absorption / desorption of water from the FSG dominates the variation of K. However , if due to simple physical absorption / desorption , the 1st annealed and 2nd annealed K values must be equal . Since ...
value of water is as high as 80 , absorption / desorption of water from the FSG dominates the variation of K. However , if due to simple physical absorption / desorption , the 1st annealed and 2nd annealed K values must be equal . Since ...
Page 298
... desorption temperature of 200 K. In contrast , exposure to electron flux ( fig . 1b ) results in the desorption of HCl over an extended temperature range . Significantly , no desorption of the vinyl group - containing fragment , CH2 ...
... desorption temperature of 200 K. In contrast , exposure to electron flux ( fig . 1b ) results in the desorption of HCl over an extended temperature range . Significantly , no desorption of the vinyl group - containing fragment , CH2 ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films