Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 69
... devices . Experimental data including porosity , morphology , and dielectric constants are presented . INTODUCTION The design of advanced materials for the fabrication of microelectronic devices is a critical feature for the development ...
... devices . Experimental data including porosity , morphology , and dielectric constants are presented . INTODUCTION The design of advanced materials for the fabrication of microelectronic devices is a critical feature for the development ...
Page 308
... devices , where it would form deep level traps and threshold voltage shift . In addition , Cu reacts readily with Si at temperatures as low as 200 ° C to form Cu , Si . 15,16 The need for a diffusion barrier between Cu and Si was ...
... devices , where it would form deep level traps and threshold voltage shift . In addition , Cu reacts readily with Si at temperatures as low as 200 ° C to form Cu , Si . 15,16 The need for a diffusion barrier between Cu and Si was ...
Page 326
... Devices ED - 29 ( 4 ) , 645-650 ( 1982 ) . [ 7 ] J. Ida , M. Yoshimaru , T. Usami , A. Ohtomo , K. Shimokawa , A ... Devices 11 ( 1 ) , 16–21 ( 1995 ) . [ 9 ] M.T. Bohr , Proc . IEEE Int'l Electron Device Meeting , 241–244 ( 1995 ) ...
... Devices ED - 29 ( 4 ) , 645-650 ( 1982 ) . [ 7 ] J. Ida , M. Yoshimaru , T. Usami , A. Ohtomo , K. Shimokawa , A ... Devices 11 ( 1 ) , 16–21 ( 1995 ) . [ 9 ] M.T. Bohr , Proc . IEEE Int'l Electron Device Meeting , 241–244 ( 1995 ) ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films