Materials Research Society Symposia Proceedings, Volume 511 |
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Page 63
LOW-DIELECTRIC CONSTANT SiO(F,C) FILMS FOR ULSI
INTERCONNECTIONS PREPARED BY CF4 PLASMA ION IMPLANTATION
Yuanzhong Zhou *, Shu Qin *, Chung Chan *, and Paul K. Chu ** * Plasma
Science and Microelectronics ...
LOW-DIELECTRIC CONSTANT SiO(F,C) FILMS FOR ULSI
INTERCONNECTIONS PREPARED BY CF4 PLASMA ION IMPLANTATION
Yuanzhong Zhou *, Shu Qin *, Chung Chan *, and Paul K. Chu ** * Plasma
Science and Microelectronics ...
Page 106
Materials issues include having all pores significantly smaller than circuit feature
sizes, the strength decrease associated with porosity, and the role of surface
chemistry on dielectric constant and environmental stability. Density (or the
inverse, ...
Materials issues include having all pores significantly smaller than circuit feature
sizes, the strength decrease associated with porosity, and the role of surface
chemistry on dielectric constant and environmental stability. Density (or the
inverse, ...
Page 147
high frequency to allow the dielectric constant at this frequency to be calculated
using the Maxwell relation. The refractive indices of MAT1 and MAT2 and their
dielectric constants, calculated from the Maxwell relation, are shown in Table 1 .
high frequency to allow the dielectric constant at this frequency to be calculated
using the Maxwell relation. The refractive indices of MAT1 and MAT2 and their
dielectric constants, calculated from the Maxwell relation, are shown in Table 1 .
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel