Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 97
... dielectric constant of the film deposited at the lowest plasma duty cycle exhibited significantly less increase than samples deposited at higher duty cycles , as shown in Figure 3 . Higher temperature curing was employed with films ...
... dielectric constant of the film deposited at the lowest plasma duty cycle exhibited significantly less increase than samples deposited at higher duty cycles , as shown in Figure 3 . Higher temperature curing was employed with films ...
Page 100
... dielectric constant of 2.0 for a 70 % porous film . Yang et al . [ 13 ] reported that the dielectric constant of their film made by ambient drying using surface modification showed a minimum of 2.2 for an annealing temperature of 300 ...
... dielectric constant of 2.0 for a 70 % porous film . Yang et al . [ 13 ] reported that the dielectric constant of their film made by ambient drying using surface modification showed a minimum of 2.2 for an annealing temperature of 300 ...
Page 256
... film density would lead to lower dielectric constant . However , some portion of this reduction in dielectric constant may also be attributed to structural change resulting from the plasma interaction with the films since a small amount ...
... film density would lead to lower dielectric constant . However , some portion of this reduction in dielectric constant may also be attributed to structural change resulting from the plasma interaction with the films since a small amount ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films