Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 8
Page 51
ADVANTAGES OF E - BEAM CURING FOR SPIN - ON POLYMERS Modification of Film Stoichiometry It has been reported that e ... cured film is 1 : 1.45 : 0.78 which is close to its nominal stoichiometry 1 : 1.5 : 1 . The stoichiometry of the Si ...
ADVANTAGES OF E - BEAM CURING FOR SPIN - ON POLYMERS Modification of Film Stoichiometry It has been reported that e ... cured film is 1 : 1.45 : 0.78 which is close to its nominal stoichiometry 1 : 1.5 : 1 . The stoichiometry of the Si ...
Page 52
... e - beam cure , variable energy e - beam cure , and depth - controlled e - beam cure . The full e - beam curing process results in a constant wet etching rate throughout the entire thickness of the film , indicating the homogeneity of ...
... e - beam cure , variable energy e - beam cure , and depth - controlled e - beam cure . The full e - beam curing process results in a constant wet etching rate throughout the entire thickness of the film , indicating the homogeneity of ...
Page 54
... Electron beam curing approach of a spin - on dielectric polymer can provide an alternative simple process scheme and lower thermal budget . High planarity can be achieved by ( a ) Thermal Cure ( b ) Depth- Controlled E - Beam Cure ...
... Electron beam curing approach of a spin - on dielectric polymer can provide an alternative simple process scheme and lower thermal budget . High planarity can be achieved by ( a ) Thermal Cure ( b ) Depth- Controlled E - Beam Cure ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films