Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 99
... effect of aging bulk TMOS aerogels in water . The highest shear modulus ( 1.6 MPa ) was obtained after 3 h of aging at 100 ° C compared with 132 h at 40 ° C . Hæreid et al . [ 18 ] further studied the effect of aging TEOS gels in water ...
... effect of aging bulk TMOS aerogels in water . The highest shear modulus ( 1.6 MPa ) was obtained after 3 h of aging at 100 ° C compared with 132 h at 40 ° C . Hæreid et al . [ 18 ] further studied the effect of aging TEOS gels in water ...
Page 143
... effect as the PPXN films were those deposited above ~ 48 ° C , above PPXC's Tg . However , the films deposited 8-41 ° C did not show any thickness effect even at 83nm . The consequences of this finding still needs to be full explored ...
... effect as the PPXN films were those deposited above ~ 48 ° C , above PPXC's Tg . However , the films deposited 8-41 ° C did not show any thickness effect even at 83nm . The consequences of this finding still needs to be full explored ...
Page 251
... Effect of ion bombardment . In the RIE processes there are additional effects of the ion bombardment . The ion bombardment creates the surface active centres and therefore the fluorine additives becomes less important for the etch ...
... Effect of ion bombardment . In the RIE processes there are additional effects of the ion bombardment . The ion bombardment creates the surface active centres and therefore the fluorine additives becomes less important for the etch ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films