Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 49
Electron Beam Processing for Spin - on Polymers and its Applications to Back - End - of - Line ( BEOL ) Integration J. J. Yang , J. Gill , J. Kennedy , S.-Q. Wang , L. Forester and M. Ross * AlliedSignal Inc. , Advanced Microelectronics ...
Electron Beam Processing for Spin - on Polymers and its Applications to Back - End - of - Line ( BEOL ) Integration J. J. Yang , J. Gill , J. Kennedy , S.-Q. Wang , L. Forester and M. Ross * AlliedSignal Inc. , Advanced Microelectronics ...
Page 298
... Electron bombardment of adsorbed species was accomplished using the co - axial electron gun with an electron energy of 500 eV . The electron beam was defocused to the maximum extent possible ( estimated spot size 0.25cm2 ) and the ...
... Electron bombardment of adsorbed species was accomplished using the co - axial electron gun with an electron energy of 500 eV . The electron beam was defocused to the maximum extent possible ( estimated spot size 0.25cm2 ) and the ...
Page 326
... Electron Device Meeting , 769–772 ( 1997 ) . [ 2 ] D. Edelstein , J. Heidenreich , R. Goldblatt , W. Cote , C. Uzoh , N. Lustig , P. Roper , T. McDe- vitt , W. Motsiff , A. Simon , J. Dukovic , R. Wachnik , H. Rathore , R. Schulz , L ...
... Electron Device Meeting , 769–772 ( 1997 ) . [ 2 ] D. Edelstein , J. Heidenreich , R. Goldblatt , W. Cote , C. Uzoh , N. Lustig , P. Roper , T. McDe- vitt , W. Motsiff , A. Simon , J. Dukovic , R. Wachnik , H. Rathore , R. Schulz , L ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films