Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 77
... ellipsometry ( Woolham Variable Angle Spectroscopic Ellipsometer , Rudolph Research AutoEl II Ellipsometer , Gaertner Scientific Corporation L116A Ellipsometer ) . Approximate thicknesses were determined by profilometry ( Tencor P - 10 ...
... ellipsometry ( Woolham Variable Angle Spectroscopic Ellipsometer , Rudolph Research AutoEl II Ellipsometer , Gaertner Scientific Corporation L116A Ellipsometer ) . Approximate thicknesses were determined by profilometry ( Tencor P - 10 ...
Page 216
... ellipsometry and Rutherford backscattering spectrospcopy ( RBS ) . Ellipsometry data fit very well with an uniform SiO2 and air mixture model . RBS measures the area density of the film , and the porosity is calculated based on the film ...
... ellipsometry and Rutherford backscattering spectrospcopy ( RBS ) . Ellipsometry data fit very well with an uniform SiO2 and air mixture model . RBS measures the area density of the film , and the porosity is calculated based on the film ...
Page 362
... Ellipsometry was used to investigate the out - of - plane expansion as a function of relative humidity . For these experiments , thinner polymer films with layer thickness between 200 and 1000nm were prepared . When extracting the out ...
... Ellipsometry was used to investigate the out - of - plane expansion as a function of relative humidity . For these experiments , thinner polymer films with layer thickness between 200 and 1000nm were prepared . When extracting the out ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films