Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 50
... energy level can be attributed to the film density being significantly increased during e - beam exposure . The electron beam dose is the amount of electrons applied to the target material . This parameter effects the overall degree of ...
... energy level can be attributed to the film density being significantly increased during e - beam exposure . The electron beam dose is the amount of electrons applied to the target material . This parameter effects the overall degree of ...
Page 134
... energy release rate , Gc , or debond energy [ 11 , 12 ] . This is the work required to cause an existing flaw to propagate over a unit area of the interface . The strain energy release rate is defined for an elastic system as : G = au ...
... energy release rate , Gc , or debond energy [ 11 , 12 ] . This is the work required to cause an existing flaw to propagate over a unit area of the interface . The strain energy release rate is defined for an elastic system as : G = au ...
Page 257
... Energy / ev 500 450 400 350 300 250 200 130 100 50 250 Hydrogen - Silsesquioxane Fils .CF4 Plasma Etched 500 Spconds € 200 .0 is 150 Intensity / Counts per second 1000 100 .0 Auger ( KLL ) 50 F 18 .Si Zp Si 2s .F Auger ( KLL ) .C is ...
... Energy / ev 500 450 400 350 300 250 200 130 100 50 250 Hydrogen - Silsesquioxane Fils .CF4 Plasma Etched 500 Spconds € 200 .0 is 150 Intensity / Counts per second 1000 100 .0 Auger ( KLL ) 50 F 18 .Si Zp Si 2s .F Auger ( KLL ) .C is ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films