Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 248
Etch rate ( nm / min ) EXPERIMENT The BCB and SILK films were prepared by spin - coating of dissolved initial products in organic solvents and curing , and were supplied directly by the DCC . The initial film thickness was always close ...
Etch rate ( nm / min ) EXPERIMENT The BCB and SILK films were prepared by spin - coating of dissolved initial products in organic solvents and curing , and were supplied directly by the DCC . The initial film thickness was always close ...
Page 249
Etch rate ( nm / min ) concentration of atomic oxygen [ 6 ] . In a pure oxygen plasma SILK etches two times faster than BCB . In a NF , plasma afterglow the etch rates of both polymers are not observable . Ellipsometric characterisation ...
Etch rate ( nm / min ) concentration of atomic oxygen [ 6 ] . In a pure oxygen plasma SILK etches two times faster than BCB . In a NF , plasma afterglow the etch rates of both polymers are not observable . Ellipsometric characterisation ...
Page 250
2. Reactive ion etching . The RIE characteristics are more important for practical applications . Some features of the etch processes for organic polymers have been reported in literature . These are basic studies related with the dry ...
2. Reactive ion etching . The RIE characteristics are more important for practical applications . Some features of the etch processes for organic polymers have been reported in literature . These are basic studies related with the dry ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films